STPS30100ST(2018) Ver la hoja de datos (PDF) - STMicroelectronics

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STPS30100ST
(Rev.:2018)

100 V power Schottky rectifier

STMicroelectronics 

STPS30100ST

Characteristics (curves)

Figure 5. Reverse leakage current versus reverse voltage

applied (typical values)

Figure 6. Junction capacitance versus reverse voltage

applied (typical values)

1.E+03 IR(mA)

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

Tj = 150 °C

Tj = 125 °C

Tj = 100 °C

Tj = 75 °C

Tj = 50 °C

Tj = 25 °C

1.E-03

1.E-04

0

10 20 30 40 50 60 70 80

VR(V)

90 100

C(pF)

10000

1000

100

1

F = 1 MHz

Vosc = 30 mV

Tj = 25 °C

VR(V)

10

100

Figure 7. Forward voltage drop versus forward current

(low level)

30 IF(A)

25

20

15

10

5

0

0.0

Tj = 125 °C

(Maximum values)

Tj = 125 °C

(Typical values)

0.2

0.4

Tj = 25 °C

(Maximum values)

0.6

0.8

VF(V)

1.0

Figure 8. Forward voltage drop versus forward current

(high level)

200 IF(A)

180

160

140

Tj = 125 °C

(Maximum values)

120

100

80

Tj = 125 °C

(Typical values)

60

Tj = 25 °C

(Maximum values)

40

20

0

VF(V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

DS5095 - Rev 2

page 4/9

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