STPS30100ST Ver la hoja de datos (PDF) - STMicroelectronics

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STPS30100ST

Power Schottky rectifier

STMicroelectronics 

Characteristics

STPS30100ST

Figure 7.

Reverse leakage current versus

reverse voltage applied (typical

values)

IR(mA)

1.E+03

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

1.E-03

1.E-04

0

VR(V)

10 20 30 40 50 60 70 80 90 100

Figure 8.

Junction capacitance versus

reverse voltage applied (typical

values)

C(pF)

10000

F=1M H z

Vosc=30m V

Tj=25°C

1000

100

1

VR (V)

10

100

Figure 9. Forward voltage drop versus

forward current (high level)

200 IFM(A)

180

160

140

Tj=125°C

(Maximum values)

120

100

80

Tj=125°C

(Typical values)

60

Tj=25°C

(Maximum values)

40

20

VFM(V)

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Figure 10. Forward voltage drop versus

forward current (low level)

IFM(A)

30

25

Tj=125°C

(Maximum values)

20

15

10

5

0

0.0

Tj=125°C

(Typical values)

0.2

0.4

Tj=25°C

(Maximum values)

VFM(V)

0.6

0.8

1.0

4/7

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