STPS30170CG(2017) Ver la hoja de datos (PDF) - STMicroelectronics

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Lista de partido

STPS30170CG
(Rev.:2017)

High voltage power Schottky rectifier

STMicroelectronics 

STPS30170C

Symbol

IR(1)

VF(2)

Characteristics

Table 4: Static electrical characteristics (per diode)

Parameter

Test conditions

Min. Typ. Max. Unit

Reverse leakage current

Forward voltage drop

Tj = 25 °C

Tj = 125 °C

Tj = 25 °C

Tj = 125 °C

Tj = 25 °C

Tj = 125 °C

VR = VRRM

IF = 15 A

IF = 30 A

-

20 µA

-

5

20 mA

-

0.92

- 0.69 0.75

V

-

1

-

0.8 0.86

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.64 x IF(AV) + 0.0073 IF2(RMS)

DocID11640 Rev 2

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