T14L2M16A-10S Ver la hoja de datos (PDF) - Taiwan Memory Technology

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T14L2M16A-10S

128K X 16 HIGH SPEED CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

DATA RETENTION CHARACTERISTICS

Preliminary T14L2M16A

PARAMETER

VCC for Data Retention

Data Retention Current

Chip Deselect to Data Retention

Time

Operation Recovery Time

SYM.

VDR

ICCDR

tCDR

TEST CONDITION

CE ≥VCC -0.2V

VIN ≥ Vcc -0.2V or

VIN ≤ 0.2V

MIN.

2.0

-

0

MAX.

-

300

-

UNIT

V

uA

ns

tR

tRC

-

ns

DATA RETENTION WAVEFORM

( Ta = 0 ~ +70 °C )

Data Retention Mode

Vcc

Vcc_typ

tCDR

VDR > 2.0V

CE

VIH

CE >Vcc- 0.2V

Vcc_typ

tR

VIH

TM Technology Inc. reserves the right

P. 10

to change products or specifications without notice.

Publication Date: AUG. 2002

Revision:0.A

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