T15M256B-70DG Ver la hoja de datos (PDF) - Taiwan Memory Technology

Número de pieza

componentes Descripción

Lista de partido

T15M256B-70DG

32K X 8 LOW POWER CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

T15M256B

AC CHARACTERISTICS

(Vcc= 5V / ± 10%, Vss = 0V, Ta =0 ~ +70 °C/ -40 to 85°C)

(1) READ CYCLE

PARAMETER

Read Cycle Time

SYM. -45ns

-50ns

-70ns

-85ns

-100ns UNIT

MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX

tRC 45 - 50 - 70 - 85 - 100 - ns

Address Access Time

tAA - 45 - 50 - 70 - 85 - 100 ns

Chip Select Access Time

tACS - 45 - 50 - 70 - 85 - 100 ns

Output Enable to Output Valid

tAOE - 22 - 25 - 35 - 40 - 50 ns

Chip Selection to Output in Low Z tCLZ* 7 - 7 - 10 - 10 - 10 - ns

Output Enable to Output in Low Z tOLZ* 5 - 5 - 5 - 5 - 5 - ns

Chip Deselection to Output in High tCHZ* - 15 - 20 - 25 - 30 - 30 ns

Z

Output Disable to Output in High Z tOHZ* - 15 - 20 - 25 - 30 - 30 ns

Output Hold from Address Change tOH 10 - 10 - 10 - 10 - 10 - ns

* These parameters is measured with 5pF test load.

(2)WRITE CYCLE

PARAMETER

Write Cycle Time

Chip Selection to End of Write

Address Valid to End of Write

Address Setup Time

Write Pulse Width

Write Recovery Time

Data Valid to End of Write

Data Hold from End of Write

Write to Output in High Z

Output Active from End of Write

SYM. -45ns

-50ns

-70ns

-85ns

-100ns UNIT

MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX

tWC 45 - 50 - 70 - 85 - 100 - ns

tCW 35 - 40 - 60 - 70 - 80 - ns

tAW 35 - 40 - 60 - 70 - 80 - ns

tAS

0 - 0 - 0 - 0 - 0 - ns

tWP 25 - 30 - 50 - 60 - 70 - ns

tWR

0 - 0 - 0 - 0 - 0 - ns

tDW 22 - 25 - 30 - 35 - 40 - ns

tDH

0 - 0 - 0 - 0 - 0 - ns

tWHZ* - 15 - 20 - 25 - 30 - 30 ns

tOW 5 - 5 - 5 - 5 - 5 - ns

* These parameters is measured with 30pF test load.

TM Technology Inc. reserves the right

P. 5

to change products or specifications without notice.

Publication Date: OCT. 2003

Revision:C

Share Link: