TB62707FG Ver la hoja de datos (PDF) - Toshiba

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TB62707FG

TOSHIBA Bi−CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC

Toshiba 

TB62707FG

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Supply Voltage

Input Voltage

Output Current

Output Voltage

GND Terminal Current

Power Dissipation

Operating Temperature

Storage Temperature

VCC

VIN

IO

VO

IGND

PD

Topr

Tstg

7.0

V

−0.3~VDD + 0.3

V

90.0

mA

−0.3~17.0

V

720

mA

780 (Note)

mW

−40~85

°C

−55~150

°C

Note: On PCB (50 × 50 × 1.6 mm Cu 30% Glass Epoxy PCB)

Ambient temperature delated above 25°C in the proportion of 6.66 mW / °C

RECOMMENDED OPERATING CONDITION (Ta = −40~85°C unless otherwise noted)

CHARACTERISTIC

Supply Voltage

Output Voltage

Output Current

Input Voltage

LATCH Pulse Width

INPUT Pulse Width

ENABLE Pulse Width

Set−Up Time for LATCH

Hold Time for LATCH

Power Dissipation

SYMBOL

TEST CONDITION

VDD

VO

IOUT

IOH

IOL

―

―

DC 1 circuit

SERIAL−OUT

SERIAL−OUT

VIH

―

VIL

tw LAT

tw LAT

tw IN

tw IN

tw EN

tw EN

tsetup (L)

thold (L)

PD

―

VDD = 4.5 V

ON PCB, Ta = 85°C

MIN TYP. MAX UNIT

4.5 5.0 5.5

V

―

― 15.0

V

5.0

―

88

mA

―

―

1.0 mA

―

― −1.0 mA

0.7

VDD

―

VDD

+0.3

V

−0.3

―

0.3

VDD

100 ―

―

ns

100

―

―

4500 ―

―

ns

4500 ―

―

4500 ―

―

ns

4500 ―

―

100

―

―

ns

100

―

―

ns

―

― 0.60 W

4

2006-06-14

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