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TC581282A

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba 

TC581282AXB

PROGRAMMING AND ERASING CHARACTERISTICS (Ta = −40° to 85°C, VCC = 2.7 V to 3.6 V)

SYMBOL

PARAMETER

MIN

tPROG

Programming Time



N

Number of Programming Cycles on Same

Page



tBERASE

Block Erasing Time



(1): Refer to Application Note (12) toward the end of this document.

TYP.

200 to 300



2

MAX

1000

3

10

UNIT

µs

ms

NOTES

(1)

2001-12-04 5/31

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