TC74ACT373P(2007) Ver la hoja de datos (PDF) - Toshiba

Número de pieza

componentes Descripción

Lista de partido

TC74ACT373P
(Rev.:2007)

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

Toshiba 

TC74ACT373P/F/FT

Electrical Characteristics

DC Characteristics

Characteristics

Symbol

High-level input

voltage

VIH

Test Condition

―

Ta =

Ta = 25°C

−40 to 85°C

Unit

VCC

(V)

Min

Typ.

Max

Min

Max

4.5

to 2.0

―

―

2.0

―

V

5.5

Low-level input

voltage

VIL

4.5

―

to ―

―

0.8

―

0.8

V

5.5

High-level output

voltage

Low-level output

voltage

3-state output

off-state current

Input leakage

current

VOH

VOL

IOZ

IIN

VIN

IOH = −50 μA

4.5 4.4 4.5

―

4.4

―

= VIH or IOH = −24 mA

4.5 3.94 ―

― 3.80 ―

V

VIL

IOH = −75 mA (Note) 5.5 ―

―

― 3.85 ―

VIN

IOL = 50 μA

4.5 ―

0.0 0.1

―

0.1

= VIH or IOL = 24 mA

4.5 ―

―

0.36

―

0.44

V

VIL

IOL = 75 mA (Note) 5.5 ―

―

―

― 1.65

VIN = VIH or VIL

VOUT = VCC or GND

5.5 ―

― ±0.5 ― ±5.0 μA

VIN = VCC or GND

5.5 ―

― ±0.1 ― ±1.0 μA

Quiescent supply

current

ICC

VIN = VCC or GND

Per input: VIN = 3.4 V

IC

Other input: VCC or GND

5.5 ―

5.5 ―

―

8.0

― 80.0 μA

― 1.35 ―

1.5 mA

Note:

This spec indicates the capability of driving 50 Ω transmission lines.

One output should be tested at a time for a 10 ms maximum duration.

Timing Requirements (input: tr = tf = 3 ns)

Characteristics

Symbol

Minimum pulse width

(LE)

Minimum set-up time

Minimum hold time

tw (H)

ts

th

Test Condition

―

VCC (V)

Ta = 25°C

Ta =

−40 to

85°C Unit

Limit Limit Limit

5.0 ± 0.5 ―

5.0 5.0

ns

―

5.0 ± 0.5 ―

2.0 2.0

ns

―

5.0 ± 0.5 ―

3.0 3.0

ns

4

2007-10-01

Share Link: