TD62001AF(2006) Ver la hoja de datos (PDF) - Toshiba

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TD62001AF
(Rev.:2006)

TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic

Toshiba 

TD62001~004AP/AF

Recommended Operating Conditions (Ta = −40°C to 85°C)

Characteristics

Symbol

Condition

Min Typ. Max Unit

Output sustaining voltage

AP

Output current

AF

VCE (SUS)

IOUT

Tpw = 25 ms

7 circuits

Ta = 85°C

Tj = 120°C

Input voltage

Except

TD62001AP/A

F

TD62002

Input voltage (output on) TD62003

TD62004

TD62001

Input voltage (output off)

TD62002

TD62003

TD62004

Input current

Only TD62001

Clamp diode reverse voltage

Clamp diode forward current

AP

Power dissipation

AF

VIN

VIN (ON)

VIN (OFF)

IIN

VR

IF

PD

IOUT = 400 mA

hFE = 800

Ta = 85°C

Ta = 85°C

0

Duty = 10%

0

Duty = 50%

0

Duty = 10%

0

Duty = 50%

0

―

50

V

― 370

― 130

mA/ch

― 233

―

70

0

―

24

V

14.5

2.8

6.2

0

0

0

0

0

―

―

―

(Note) ―

―

24

―

24

V

―

24

―

0.6

―

7.4

V

―

0.7

―

1.0

―

10

mA

―

50

V

― 350 mA

― 0.76

W

― 0.325

Note: When mounted on a glass-epoxy PCB (30 mm × 30 mm × 1.6 mm, Cu area: 50%)

3

2006-06-13

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