TD62785FG Ver la hoja de datos (PDF) - Toshiba

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TD62785FG

TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

Toshiba 

TD62785PG/FG

Absolute Maximum Ratings (Ta = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Supply Voltage

Output Voltage

Output Current

Input Voltage

Input Current

PG

Power Dissipation

FG

Operating Temperature

Storage Temperature

VCC

VOUT

IOUT

VIN

IIN

PD (Note 1)

Topr

Tstg

7.0

VCC

−500

VCC

−10

1.47

0.96

−40~85

−55~150

V

V

mA / ch

V

mA

W

°C

°C

Note 1: Delated above 25°C in the proportion of 11.7 mW / °C (PG−Type), 7.7 mW / °C (FG−Type).

Recommended Operating Conditions (Ta = −40~85°C)

CHARACTERISTIC

Supply Voltage

Output Voltage

PG

FG

Output Current

PG

FG

Input Voltage

Power Dissipation

Output On

Output Off

PG

FG

SYMBOL

VCC

VOUT

TEST CONDITION

―

―

DC 1 Circuit, Ta = 25°C

IOUT

Tpw ≤ 25 ms

8 Circuits On

Ta = 85°C

Tj = 120°C

VIN

VIN (ON)

VIN (OFF)

PD

Duty = 10%

Duty = 50%

Duty = 10%

Duty = 50%

―

―

―

―

―

MIN TYP. MAX UNIT

4.5

0

0

0

0

0

0

0

0

0

VCC

−1.0

―

―

5.0 5.5

V

― −VCC V

― −400

― −400

― −376 mA /

―

−67

ch

― −248

― −38

―

VCC

V

―

0.8

V

―

VCC

― 0.52

W

― 0.35

2

2006-06-14

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