Philips Semiconductors
Versatile telephone transmission circuit
with dialler interface
Product specification
TEA1068
CHARACTERISTICS
Iline = 10 to 140 mA; VEE = 0 V; f = 800 Hz; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
Supplies: LN and VCC
VLN
∆VLN/∆T
voltage drop over circuit between
LN and VEE
voltage drop variation with
temperature
microphone inputs open
Iline = 5 mA
Iline = 15 mA
Iline = 100 mA
Iline = 140 mA
Iline = 15 mA
VLN
voltage drop over circuit, between Iline = 15 mA
LN and VEE with external resistor
RVA
RVA (LN to REG) = 68 kΩ
RVA (REG to SLPE) = 39 kΩ
ICC
supply current
VCC = 2.8 V
PD = LOW
PD = HIGH
VCC
supply voltage available for
peripheral circuitry
Iline = 15 mA; MUTE = HIGH
Ip = 1.2 mA
Ip = 0 mA
Microphone inputs MIC+ and MIC−
Zi
input impedance
differential between
MIC+ and MIC−
CMRR
common mode rejection ratio
single-ended MIC+ or
MIC− to VEE
Gv
∆Gvf
voltage gain from MIC+/MIC− to LN Iline = 15 mA; R7 = 68 kΩ;
gain variation with frequency at
with respect to 800 Hz
f = 300 Hz and f = 3400 Hz
∆GvT
gain variation with temperature at
−25 °C and +75 °C
Iline = 50 mA;
with respect to 25 °C; without
R6
3.95
4.2
5.4
−
−4
3.45
4.65
−
−
2.8
3.5
51
25.5
−
51
−0.5
−
Dual-tone multi-frequency input DTMF
Zi
Gv
∆Gvf
input impedance
voltage gain from DTMF to LN
gain variation with frequency at
f = 300 Hz and f = 3400 Hz
Iline = 15 mA; R7 = 68 kΩ
with respect to 800 Hz
∆GvT
gain variation with temperature at Iline = 50 mA;
Tamb = −25 °C and +75 °C
with respect to 25 °C
Gain adjustment connections GAS1 and GAS2
∆Gv
gain variation with R7, transmitting
amplifier
16.8
24.5
−0.5
−
−8
TYP. MAX. UNIT
4.25 4.55
4.45 4.7
6.1 6.7
−
7.5
−2
0
V
V
V
V
mV/K
3.8 4.1 V
5
5.35 V
0.96 1.3 mA
55
82
µA
3.05 −
V
3.75 −
V
64
77
kΩ
32
38.5 kΩ
82
−
dB
52
53
dB
±0.2 +0.5 dB
±0.2 −
dB
20.7 24.6 kΩ
25.5 26.5 dB
±0.2 +0.5 dB
±0.5 −
dB
−
+8
dB
1996 Apr 23
10