TEMD1020 Ver la hoja de datos (PDF) - Vishay Semiconductors
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TEMD1020 Datasheet PDF : 8 Pages
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TEMD1000, TEMD1020, TEMD1030, TEMD1040
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
IF = 50 mA
VF
-
Breakdown voltage
IR = 100 μA, E = 0
V(BR)
60
Reverse dark current
VR = 10 V, E = 0
Iro
-
Diode capacitance
VR = 5 V, f = 1 MHz, E = 0
CD
-
Reverse light current
Ee = 1 mW/cm2, λ = 870 nm, VR = 5 V
Ira
6.0
Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V
Ira
-
Temperature coefficient of Ira
VR = 5 V, λ = 870 nm,
TKIra
-
Absolute spectral sensitivity
VR = 5 V, λ = 870 nm
VR = 5 V, λ = 950 nm
s(λ)
-
s(λ)
-
Angle of half sensitivity
ϕ
-
Wavelength of peak sensitivity
λp
-
Range of spectral bandwidth
λ0.5
-
Rise time
VR = 10 V, RL = 50 Ω, λ = 820 nm
tr
-
Fall time
VR = 10 V, RL = 50 Ω, λ = 820 nm
tf
-
TYP.
1
-
1
1.8
10
12
0.2
0.60
0.55
± 15
940
790 to 1050
4
4
MAX.
1.3
-
10
-
13.0
-
-
-
-
-
-
-
-
-
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
100
UNIT
V
V
nA
pF
μA
μA
%/K
A/W
A/W
°
nm
nm
ns
ns
100
10
10
VR = 10 V
1
20
40
60
80
100
94 8427 Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1
VCE = 5 V,
λ = 950 nm
0.1
0.01
0.1
1
10
16055
Ee - Irradiance (mW/cm²)
Fig. 3 - Reverse Light Current vs. Irradiance
1.4
1.2
VR = 5 V
λ = 950 nm
1.0
0.8
0.6
0
94 8416
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
8
6
E=0
f = 1 MHz
4
2
0
0.1
1
10
100
94 8430
VR- Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Rev. 2.5, 04-Jun-2019
2
Document Number: 81564
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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