TEMD5110 Ver la hoja de datos (PDF) - Vishay Semiconductors
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TEMD5110
Vishay Semiconductors
TEMD5110 Datasheet PDF : 8 Pages
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TEMD5110X01
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 50 mA
Breakdown voltage
IR = 100 µA, E = 0
Reverse dark current
VR = 10 V, E = 0
Diode capacitance
VR = 0 V, f = 1 MHz, E = 0
VR = 3 V, f = 1 MHz, E = 0
Symbol
VF
V(BR)
Iro
CD
CD
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Open circuit voltage
Temperature coefficient of Vo
Short circuit current
Temperature coefficient of Ik
Reverse light current
Angle of half sensitivity
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
VR = 10 V, λ = 950 nm
VR = 10 V, RL = 1 kΩ, λ = 820 nm
VR = 10 V, RL = 1 kΩ, λ = 820 nm
Symbol
Vo
TKVo
Ik
TKIk
Ira
ϕ
λp
λ0.5
NEP
tr
tf
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Min
Typ.
Max
1
1.3
60
2
30
70
25
40
Min
Typ.
Max
350
- 2.6
50
0.1
45
55
± 65
940
790 to 1050
4 x 10-14
100
100
Unit
V
V
nA
pF
pF
Unit
mV
mV/K
µA
%/K
µA
deg
nm
nm
W/√ Hz
ns
ns
1000
100
10
VR = 10 V
1
20
40
60
80
100
94 8403
T - Ambient Temperature (°C)
amb
Figure 1. Reverse Dark Current vs. Ambient Temperature
1.4
1.2
VR = 5 V
λ = 950 nm
1.0
0.8
0.6
0
94 8409
20
40
60
80 100
Tamb - Ambient Temperature (°C)
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
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2
Document Number 84658
Rev. 1.2, 07-May-07
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