TGA1141-EPU Ver la hoja de datos (PDF) - TriQuint Semiconductor
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TGA1141-EPU Datasheet PDF : 9 Pages
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Advance Product Information
August 27, 2003
TABLE I
MAXIMUM RATINGS
TGA1141-EPU
Symbol
V+
V-
I+
| IG |
PD
PIN
TCH
TM
TSTG
Parameter 1/
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current
Gate Supply Current
Power Dissipation
Input Continuous Wave Power
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
Value
Notes
8V
-5V TO 0V
1.76 A
70 mA
9.4 W
27 dBm
150 °C
320 °C
-65 °C to 150 °C
2/
2/
2/, 3/
2/
4/, 5/
1/ These ratings represent the maximum operable values for this device.
2/ Current is defined under no RF drive conditions. Combinations of supply voltage, supply
current, input power, and output power shall not exceed PD.
3/ When operated at this power dissipation with a base plate temperature of 70 °C, the median
life is 1 E+6 hours.
4/ Junction operating temperature will directly affect the device median time to failure (TM). For
maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
5/ These ratings apply to each individual FET.
TABLE II
DC PROBE TESTS
(TA = 25 °C, Nominal)
Symbol
Idss
Gm
VP
BVGS
BVGD
Parameter
Saturated Drain Current
Transconductance
Pinch-off Voltage
Breakdown Voltage gate-
source
Breakdown Voltage gate-
drain
Minimum
40
88
-1.5
-30
Maximum
188
212
-0.5
-8
-30
-8
Value
mA
mS
V
V
V
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
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