TGA4522(2005) Ver la hoja de datos (PDF) - TriQuint Semiconductor

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TGA4522
(Rev.:2005)

33 - 47 GHz Wide Band Driver Amplifier

TriQuint Semiconductor 

Advance Product Information

September 21, 2005

TGA4522

TABLE I

MAXIMUM RATINGS 1/

SYMBOL

PARAMETER

VALUE

NOTES

Vd

Vg

Id

Ig

PIN

PD

TCH

TM

TSTG

Drain Voltage

Gate Voltage Range

Drain Current

Gate Current

Input Continuous Wave Power

Power Dissipation

Operating Channel Temperature

Mounting Temperature (30 Seconds)

Storage Temperature

8V

-2 TO 0 V

700 mA

16 mA

23 dBm

See note 4/

150 0C

320 0C

-65 to 150 0C

2/

2/ 3/

3/

2/

5/ 6/

1/ These ratings represent the maximum operable values for this device.

2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.

3/ Total current for the entire MMIC.

4/ For a median life time of 1E+6 hrs, Power dissipation is limited to:

PD(max) = (150 0C – TBASE 0C) / 35.5 (0C/W)

Where TBASE is the base plate temperature.

5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For

maximum life, it is recommended that junction temperatures be maintained at the lowest possible

levels.

6/ These ratings apply to each individual FET.

2

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

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