TGA4543
40.5 - 43.5 GHz Power Amplifier
Bond Pad Description
14
13
12
11 10 9 8
1
7
2
3
4
56
Bond Pad
1
2, 14
3, 4, 5, 6, 10, 11,
12, 13
7
8
9
Symbol
RF In
Vg
Vd
RF Out
Vdet
Vref
Preliminary Data Sheet: Rev – 9/15/12
© 2012 TriQuint Semiconductor, Inc.
Description
Input, matched to 50 ohms
Gate voltage. ESD protection included; Bias network is required;
see Application Circuit on page 7 as an example.
Drain voltage. Bias network is required; must be biased from both
sides; see Application Circuit on page 7 as an example.
Output, matched to 50 ohms.
Detector diode output voltage. Varies with RF output power.
Reference diode output voltage.
- 8 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®