TIM1011-4L Ver la hoja de datos (PDF) - Toshiba
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TIM1011-4L Datasheet PDF : 4 Pages
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MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM1011-4L
FEATURES
HIGH POWER
P1dB=36.5dBm at 10.7GHz to 11.7GHz
HIGH GAIN
G1dB=7.5dB at 10.7GHz to 11.7GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS
Output Power at 1dB Gain P1dB
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
G1dB
IDS1
VDS= 9V
f= 10.7 to 11.7GHz
Gain Flatness
ΔG
Power Added Efficiency
3rd Order Intermodulation
ηadd
IM3
Two-Tone Test
Distortion
Drain Current
IDS2
Po=25.0 dBm
(Single Carrier Level)
Channel Temperature Rise ΔTch (VDS x IDS + Pin – P1dB)
x Rth(c-c)
Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.)
UNIT
dBm
dB
A
dB
%
dBc
A
°C
MIN.
35.5
6.5
⎯
⎯
⎯
-42
⎯
⎯
TYP. MAX.
36.5 ⎯
7.5 ⎯
1.7 2.2
⎯ ±0.8
24 ⎯
-45 ⎯
1.7 2.2
⎯ 70
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
gm
VGSoff
IDSS
VGSO
CONDITIONS
VDS= 3V
IDS= 2.0A
VDS= 3V
IDS= 60mA
VDS= 3V
VGS= 0V
IGS= -60μA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
mS ⎯ 1200 ⎯
V -2.0 -3.5 -5.0
A
⎯ 4.0 ⎯
V
-5 ⎯ ⎯
°C/W ⎯ 2.9 3.5
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Sep. 2006
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