TS652 Ver la hoja de datos (PDF) - STMicroelectronics
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TS652 Datasheet PDF : 9 Pages
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TS652
ELECTRICAL CHARACTERISTICS. VCC = ±6Volts, Tamb = 25°C (unless otherwise specified).
Symbol
Parameter
Test Conditio n
Min.
Typ.
Max Unit
DC PERFORMANCE
Vi Voltage on the Input Pin
ICC Total Supply Current
No load, Vout = 0
Iccpdw Power Down Total Consumption Power Down Mode
∆VOFFSET Differential Input Offset Voltage Vin = 0, AV = 30dB
SVR Supply Voltage Rejection Ratio AV = 0dB
50
AC PERFORMANCE
Zin Input Impedance
Zout Power Down Output Impedance Power Down Mode
VOH
High Level Output Voltage
RL connected to GND
RL = 500Ω
VOL
Low Level Output Voltage
RL connected to GND
RL = 500Ω
Voltage Gain
F= 1MHz
AV
Gain monotonicity guaranteed by design
100kΩ
4
-9
PAV Precision of the Voltage Gain F= 1MHz
-1
Avstep Step Value
F= 1MHz
2.4
Avmin
Gain Mismatch between Both
Channels
F= 1MHz
AV = -9dB
55
Bandwidth @ -3dB
Bw
RL = 500Ω
CL = 15pF
AV = 0dB
AV = +18dB
32
26
AV = +30dB
10
Rbw Bandwidth Roll-off
Io
Bandwidth @ -3dB
RL = 500Ω, CL = 15pF
AV = +30dB, F = 1MHz
|Source|
17
Sink
17
SR Slew Rate (gain independent) Vo = 2Vpeak
50
NOISE AND DISTORTION
in Equivalent Input Noise Current F = 100kHz
en
THD30
Equivalent Input Noise Voltage
Harmonic Distorsion
F = 100kHz
AV = 30dB
1Vpeak, F = 150kHz,
AV = +30dB, RL = 500Ω//15pF
H2
H3
H4
H5
Third Order Intermodulation
IM3 Product
F1 = 180kHz, F2 = 280kHz
Vout = 1Vpeak, AV = +30dB
RL = 500Ω//15pF
@ 80kHz
@ 380kHz
@640kHz
@740kHz
Third Order Intermodulation
IM3 Product
F1 = 70kHz, F2 = 80kHz
Vout = 1Vpeak, AV = +30dB
RL = 500Ω//15pF
@ 60kHz
@ 90kHz
@220kHz
@230kHz
0
28
80
100kΩ//5pF
150kΩ//5pF
4.5
-4.5
3
110
69
52
18
0.08
28
22
100
1.5
4.6
-70
-93
-98
-99
-77
-85
-86
-87
-77
-79
-83
-84
V
mA
150
µA
6
mV
dB
V
-4
V
30
dB
1
dB
3.6
dB
1
dB
200
132
MHz
100
36
dB
mA
V/µs
pA/√Hz
nV/√Hz
dBc
dBc
dBc
3/9
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