TSC236 Ver la hoja de datos (PDF) - TSC Corporation
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TSC236 Datasheet PDF : 6 Pages
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TSC236
High Voltage NPN Transistor
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Static
Collector-Base Voltage
IC =1mA, IB =0
BVCBO
700
--
--
V
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
IC =10mA, IE =0
IE =0.1mA, IC =0
BVCEO
400
--
--
V
BVEBO
9
--
--
V
Collector Cutoff Current
VCE =400V, IB=0
ICEO
--
--
250
uA
Collector Cutoff Current
VCB =700V, IE =0
ICBO
--
--
1
mA
Emitter Cutoff Current
VEB = 9V, IC =0
IEBO
--
--
1
mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC=0.8A, IB =0.1A
IC=2.5A, IB =0.6A
IC=1A, IB =0.2A
IC=2.5A, IB =0.5A
VCE(SAT)1
--
VCE(SAT)2
--
VBE(SAT)1
--
VBE(SAT)2
--
--
1.1
V
--
1.3
--
1.2
V
--
1.3
DC Current Gain
VCE =5V, IC = 10mA
VCE =5V, IC = 2.5A
15
--
32
hFE
8
--
28
Dynamic
Frequency
Output Capacitance
Resistive Load
VCE =10V, IC =0.5A
fT
VCB =10V, f =0.1MHz
Cob
4
--
--
MHz
--
65
--
pF
Turn On Time
Storage Time
Fall Time
VCC =125V, IC =2A,
tON
IB1 =IB2=0.4A, tP =25uS
tSTG
Duty Cycle ≤1%
tf
--
0.2
0.5
uS
--
2.2
3
uS
--
0.2
0.5
uS
Note: pulse test: pulse width ≤ 300uS, duty cycle ≤ 2%
2/6
Version: A07
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