UM6K1N Ver la hoja de datos (PDF) - ROHM Semiconductor
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UM6K1N Datasheet PDF : 4 Pages
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Transistors
2.5V Drive Nch+Nch MOS FET
UM6K1N
UM6K1N
zStructure
Silicon N-channel MOS FET
zFeatures
1) Two 2SK3018 transistors in a single UMT package.
2) The MOS FET elements are independent, eliminating
mutual interference.
3) Mounting cost and area can be cut in half.
4) Low On-resistance.
5) Low voltage drive (2.5V drive) makes this device ideal for
portable equipment.
zExternal dimensions (Unit : mm)
UMT6
2.0
1.3
0.9
0.65
0.65
0.7
(5)
(6)
(4)
1pin mark
(1)
(3)
(2)
0.2
0.15
Each lead has same dimensions
Abbreviated symbol : K1
zApplications
Interfacing, switching (30V, 100mA)
zPackaging specifications
Type
UM6K1N
Package
Code
Basic ordering unit (pieces)
Taping
TN
3000
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Total power dissipation
Continuous
Pulsed
ID
IDP ∗1
PD ∗2
Channel temperature
Tch
Range of storage temperature
Tstg
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
zInner circuit
Limits
Unit
30
V
±20
V
±100
mA
±400
mA
150
mW
150
°C
−55 to +150
°C
(6)
Tr1
Gate
(5) Protection (4)
Diode
∗
Tr2
∗
Gate
(1) Protection (2)
(3)
Diode
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
∗ A protection diode has been built
in between the gate and the source
to protect against static electricity
when the product is in use.
Use the protection circuit when
rated voltages are exceeded.
zThermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a) ∗
∗ With each pin mounted on the recommended lands.
Limits
833
1042
Unit
°C / W / TOTAL
°C / W / ELEMENT
Rev.B
1/3
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