UPA1704 Ver la hoja de datos (PDF) - NEC => Renesas Technology
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UPA1704 Datasheet PDF : 8 Pages
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µ PA1704
ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain to Source On-state Resistance
RDS(on)1 VGS = 4.0 V, ID = 5.0 A
9.8 13 mΩ
RDS(on)2 VGS = 2.5 V, ID = 5.0 A
12 16 mΩ
Gate to Source Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
0.5 0.8 1.5 V
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 5.0 A
10 25
S
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
10 µA
Gate to Source Leakage Current
IGSS
VGS = ±12 V, VDS = 0 V
±10 µA
Input Capacitance
Ciss
VDS = 10 V
2700
pF
Output Capacitance
Coss
VGS = 0 V
880
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
400
pF
Turn-on Delay Time
td(on)
ID = 5.0 A
25
ns
Rise Time
tr
VGS(on) = 4.0 V
95
ns
Turn-off Delay Time
td(off)
VDD = 15 V
235
ns
Fall Time
tf
RG = 10 Ω
200
ns
Total Gate Charge
QG
ID = 10 A
38
nC
Gate to Source Charge
QGS
VDD = 24 V
3.3
nC
Gate to Drain Charge
QGD
VGS = 4.0 V
15
nC
Body Diode Forward Voltage
VF(S-D) IF = 10 A, VGS = 0 V
0.8
V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 10 A, VGS = 0 V
Qrr
di/dt = 100 A/ µs
48
ns
53
nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1µs
Duty Cycle ≤ 1 %
RL
VDD
VGS
VGS
Wave Form
010 %
VGS(on) 90 %
ID
90 %
ID
ID
0 10 %
Wave Form
90 %
10 %
td(on) tr td(off) tf
ton
toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D12908EJ1V1DS00
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