UPA1705 Ver la hoja de datos (PDF) - NEC => Renesas Technology
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UPA1705 Datasheet PDF : 8 Pages
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µPA1705
ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 4.0 A
19 27 mΩ
RDS(on)2 VGS = 4.5 V, ID = 4.0 A
30 40 mΩ
Gate to Source Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
1.5 2.0 2.5 V
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 4.0 A
4.0 8.4
S
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
10 µA
Gate to Source Leakage Current
IGSS
VGS = ±25 V, VDS = 0 V
±10 µA
Input Capacitance
Ciss
VDS = 10 V
750
pF
Output Capacitance
Coss
VGS = 0 V
350
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
160
pF
Turn-on Delay Time
td(on)
ID = 4.0 A
19
ns
Rise Time
tr
VGS(on) = 10 V
107
ns
Turn-off Delay Time
td(off)
VDD = 15 V
50
ns
Fall Time
tf
RG = 10 Ω
32
ns
Total Gate Charge
QG
ID = 8.0 A
19
nC
Gate to Source Charge
QGS
VDD = 24 V
2.4
nC
Gate to Drain Charge
QGD
VGS = 10 V
6.3
nC
Body Diode Forward Voltage
VF(S-D) IF = 8.0 A, VGS = 0 V
0.8
V
Reverse Recovery Time
trr
If = 8.0 A, VGS = 0 V
33
ns
Reverse Recovery Charge
Qrr
di/dt = 100A/µs
22
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
RG = 10 Ω
VGS
0
t
t = 1µ s
Duty Cycle ≤ 1 %
RL
VDD
VGS
VGS
Wave Form
0 10 %
VGS (on) 90 %
ID
90 %
ID
ID
Wave Form
0 10 %
90 %
10 %
td (on)
tr
td (off)
tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet G12712EJ1V0DS00
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