US202XG-AF5-R(2011) Ver la hoja de datos (PDF) - Unisonic Technologies

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US202XG-AF5-R
(Rev.:2011)

100mΩ POWER DISTRIBUTION SWITCHES

Unisonic Technologies 

US202

Preliminary

CMOS IC

„ ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VIN

7

V

Chip Enable

VEN

-0.3~7

V

Power Dissipation (TA = 25°C)

PD

0.25

W

Junction Temperature

TJ

-20~100

°C

Storage Temperature

TSTG

-65~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS

(VIN = 5V, CIN = COUT = 1μF, TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Input Voltage Range

VIN

Output NMOSFET RDS(ON)

RDS(ON) IL = 1A

Supply Current

VIN= 3V

VIN= 5V

Output Turn-On Rising Time

TR RL= 10Ω, 90% Settling

Current Limit Threshold

ILIMIT

Short-Circuit Fold Back Current

IOS

VOUT = 0V, measured prior to

thermal shutdown

CE Input High Threshold

VIH

CE Input Low Threshold

VIL

Shutdown Supply Current

IOFF CE = “0”

Output Leakage Current

II(LEAK) CE = “0”, VOUT = 0V

VIN Under Voltage Lockout

UVLO

VIN Under Voltage Hysteresis

Thermal Limit

TSD

Thermal Limit Hysteresis

∆TSD

MIN TYP MAX UNIT

2.2

6V

85 100 mΩ

19 40

µA

23 45

400

µS

1.1 1.5 2 A

1.0

A

2.0

V

0.8 V

0.1 1 µA

0.5 10 µA

1.3 1.8

V

100

mV

130

°C

20

°C

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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