VNK10N06FM Ver la hoja de datos (PDF) - STMicroelectronics
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VNK10N06FM Datasheet PDF : 14 Pages
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VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
ELECTRICAL CHARACTERISTICS (continued)
DYNAMIC
Symbol
Parameter
Coss Output Capacitance
Test Conditions
VDS = 13 V f = 1 MHz Vin = 0
Min.
Typ.
350
Max.
500
Unit
pF
SWITCHING (**)
Symbol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
(di/dt)on
Qi
Parameter
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Test Conditions
VDD = 16 V
Id = 1 A
Vgen = 7 V
Rgen = 10 Ω
(see figure 3)
VDD = 16 V
Id = 1 A
Vgen = 7 V
Rgen = 1000 Ω
(see figure 3)
VDD = 16 V
Vin = 7 V
VDD = 12 V
ID = 1 A
Rgen = 10 Ω
ID = 1 A Vin = 7 V
Min.
Typ.
1100
550
200
100
1.2
1
1.6
1.2
1.5
Max.
1600
900
400
200
1.8
1.5
2.3
1.8
Unit
ns
ns
ns
ns
µs
µs
µs
µs
A/µs
13
nC
SOURCE DRAIN DIODE
Symbol
Parameter
VSD (∗) Forward On Voltage
trr (∗∗)
Qrr (∗∗)
IRRM (∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 1 A Vin = VIL
ISD = 1 A di/dt = 100 A/µs
VDD = 30 V Tj = 25 oC
(see test circuit, figure 5)
Min.
Typ.
0.8
125
0.22
3.5
Max.
1.6
Unit
V
ns
µC
A
PROTECTION
Symbol
Parameter
Test Conditions
Ilim
Drain Current Limit
Vin = 7 V VDS = 13 V
tdlim (∗∗) Step Response
Current Limit
Vin = 7 V VDS step from 0 to 13 V
Tjsh (∗∗) Overtemperature
Shutdown
Tjrs (∗∗) Overtemperature Reset
Eas (∗∗) Single Pulse
Avalanche Energy
starting Tj = 25 oC VDD = 24 V
Vin = 7 V Rgen = 1 KΩ L = 10 mH
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
Min.
6
Typ.
10
12
Max.
15
20
Unit
A
µs
150
oC
135
oC
250
mJ
3/14
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