VNP28N04FI Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Lista de partido
VNP28N04FI Datasheet PDF : 13 Pages
| |||
VNP28N04FI-VNB28N04-VNV28N04
ELECTRICAL CHARACTERISTICS (continued)
DYNAMIC
Symb ol
gfs (∗)
Coss
P a ram et er
Forward
T r ans c on duc ta nc e
Output Capacitance
Test Conditions
VDS = 13 V ID = 14 A
VDS = 13 V f = 1 MHz Vin = 0
Min.
9
Typ .
18
M a x.
Unit
S
700 1100 pF
SWITCHING (**)
Symb ol
) td(on)
t(s tr
td(off)
c tf
du td(on)
ro tr
td(off)
P tf
te (di/ dt ) o n
ole Qi
P a ram et er
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Test Conditions
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 14 A
Rgen = 10 Ω
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 14 A
Rgen = 1000 Ω
VDD = 15 V
Vin = 10 V
VDD = 12 V
ID = 14 A
Rgen = 10 Ω
ID = 10 A Vin = 10 V
Min.
Typ .
100
330
400
155
450
1.7
7.5
3.4
35
M a x.
300
800
900
400
900
4
25
10
Unit
ns
ns
ns
ns
ns
µs
µs
µs
A/µs
60
nC
bs SOURCE DRAIN DIODE
- O Symbol
P a ram et er
t(s) VSD (∗) Forward On Voltage
c trr (∗∗)
du Qrr (∗∗)
Pro IRRM (∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Cu r re nt
Test Conditions
ISD = 14 A Vin = 0
ISD = 14 A di/dt = 100 A/µs
VDD = 30 V Tj = 25 oC
(see test circuit, figure 5)
Min.
Typ .
180
M a x.
2
Unit
V
ns
0.45
µC
7
A
lete PROTECTION
so Symbol
P a ram et er
ObIlim
Drain Current Limit
Test Conditions
Vin = 10 V VDS = 13 V
Vin = 5 V VDS = 13 V
Min.
19
19
Typ .
28
28
M a x.
41
41
Unit
A
A
tdl im (∗∗)
Tjsh (∗∗)
Tjrs (∗∗)
Step Response
Current Limit
Vin = 10 V
Vin = 5 V
Overtemperature
Shutdown
Overtemperature Reset
25
40
µs
70
120
µs
150
oC
135
oC
Igf (∗∗) Fault Sink Current
Vin = 10 V VDS = 13 V
Vin = 5 V VDS = 13 V
50
mA
20
mA
Eas (∗∗) Single Pulse
starting Tj = 25 oC VDD = 20 V
2.5
J
Avalanche Energy
Vin = 10 V Rgen = 1 KΩ L = 10 mH
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
3/13
Share Link: 