VNB14NV04(2003) Ver la hoja de datos (PDF) - STMicroelectronics

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VNB14NV04
(Rev.:2003)

“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET

STMicroelectronics 

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

THERMAL DATA

Symbol

Rthj-case

Rthj-lead

Rthj-amb

Parameter

Thermal Resistance Junction-case MAX

Thermal Resistance Junction-lead MAX

Thermal Resistance Junction-ambient MAX

SO-8

27

90 (*)

DPAK

1.7

Value

TO-220

1.7

IPAK

1.7

65 (*)

62

102

D2PAK

1.7

52 (*)

(*) When mounted on a standard single-sided FR4 board with 0.5cm2 of Cu (at least 35 µm thick) connected to all DRAIN pins.

Horizontal mounting and no artificial air flow.

Unit

°C/W

°C/W

°C/W

ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified)

OFF

Symbol

VCLAMP

VCLTH

VINTH

IISS

VINCL

IDSS

ON

Symbol

RDS(on)

Parameter

Drain-source Clamp

Voltage

Drain-source Clamp

Threshold Voltage

Input Threshold Voltage

Supply Current from Input

Pin

Input-Source Clamp

Voltage

Zero Input Voltage Drain

Current (VIN=0V)

Test Conditions

VIN=0V; ID=7A

VIN=0V; ID=2mA

VDS=VIN; ID=1mA

VDS=0V; VIN=5V

IIN=1mA

IIN=-1mA

VDS=13V; VIN=0V; Tj=25°C

VDS=25V; VIN=0V

Parameter

Static Drain-source On

Resistance

Test Conditions

VIN=5V; ID=7A; Tj=25°C

VIN=5V; ID=7A

Min Typ Max Unit

40

45

55

V

36

V

0.5

2.5

V

100

150

µA

6

6.8

8

V

-1.0

-0.3

30

µA

75

Min Typ Max Unit

35

mΩ

70

3/29

1

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