VNB14NV04 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Lista de partido

VNB14NV04

"OMNIFET II" fully autoprotected Power MOSFET

STMicroelectronics 

Electrical specification

VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04

Table 4.

Symbol

Electrical characteristics (continued)

Parameter

Test Conditions

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

(di/dt)on Turn-on current slope

Qi Total input charge

Source drain diode

VSD(1)

trr

Qrr

IRRM

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Protection

VDD = 15 V Id = 7 A

Vgen = 5 V Rgen = 2.2 KΩ

(see Figure 3)

VDD = 15 V ID = 7 A

Vgen = 5 V Rgen = RIN MIN =10 Ω

VDD = 12 V ID = 7 A Vin = 5 V;

Igen = 2.13 mA (see Figure 7)

ISD = 7 A Vin = 0 V

ISD = 7 A; di/dt = 40 A/µs

VDD = 30 V L = 200 µH

(see test circuit, Figure 4)

Ilim Drain current limit

tdlim Step response current limit

Tjsh Over temperature shutdown

Tjrs Over temperature reset

Igf Fault sink current

Eas Single pulse avalanche energy

VIN = 5 V; VDS = 13 V

VIN = 5 V; VDS = 13 V

VIN = 5 V; VDS = 13 V; Tj = Tjsh

starting Tj = 25 °C; VDD = 24 V

VIN = 5 V; Rgen = RIN MIN = 10 Ω;

L = 24 mH (see Figure 5 and

Figure 6)

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min Typ Max Unit

1.5 4.5 µs

9.7 30.0 µs

25.0 µs

10.2 30.0 µs

16

A/µs

36.8

nC

0.8

V

300

ns

0.8

µC

5

A

12

18 24 A

45

µs

150 175 200 °C

135

°C

10

15 20 mA

400

mJ

8/31

Doc ID 7393 Rev 8

Share Link: