VNP35NV04 Ver la hoja de datos (PDF) - STMicroelectronics
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VNP35NV04 Datasheet PDF : 19 Pages
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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)
DYNAMIC
Symbol
gfs (*)
COSS
Parameter
Forward
Transconductance
Output Capacitance
Test Conditions
VDD=13V; ID=15A
VDS=13V; f=1MHz; VIN=0V
Min Typ Max
35
1300
SWITCHING
Symbol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
(di/dt)on
Parameter
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Qi
Total Input Charge
Test Conditions
VDD=15V; ID=15A
Vgen=5V; Rgen=RIN MIN=4.7Ω
(see figure 1)
VDD=15V; ID=15A
Vgen=5V; Rgen=2.2KΩ
(see figure 1)
VDD=15V; ID=15A
Vgen=5V; Rgen=RIN MIN=4.7Ω
VDD=12V; ID=15A; VIN=5V
Igen =2.13mA (see figure 5)
Min Typ Max
150 500
840 2500
980 3000
600 1500
4
12
27
100
34
120
31
110
18
118
SOURCE DRAIN DIODE
Symbol
VSD (*)
trr
Qrr
IRRM
Parameter
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Test Conditions
ISD=15A; VIN=0V
ISD=15A; dI/dt=100A/µs
VDD=30V; L=200µH
(see test circuit, figure 2)
Min Typ Max
0.8
400
1.4
7
PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)
Symbol
Ilim
tdlim
Parameter
Drain Current Limit
Step Response Current
Limit
Test Conditions
VIN=6V; VDS=13V
VIN=6V; VDS=13V
Min Typ Max
30
45
60
50
Overtemperature
Tjsh
Shutdown
150 175 200
Tjrs
Overtemperature Reset
135
Igf
Fault Sink Current
VIN=5V; VDS=13V; Tj=Tjsh
10
15
20
Single Pulse
Eas
Avalanche Energy
starting Tj=25°C; VDD=24V
VIN=5V; Rgen=RIN MIN=4.7Ω; L=24mH 1.7
(see figures 3 & 4)
(*) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
Unit
S
pF
Unit
ns
ns
ns
ns
µs
µs
µs
µs
A/µs
nC
Unit
V
ns
µC
A
Unit
A
µs
°C
°C
mA
J
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