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VND1NV04

OMNIFET II fully autoprotected Power MOSFET

STMicroelectronics 

VND1NV04 - VNN1NV04 - VNS1NV04

Electrical specifications

2.2

Thermal data

Table 3. Thermal data

Symbol

Parameter

Max value

Unit

SOT-223 SO-8 DPAK

Rthj-case

Thermal resistance junction-case

18

3.5 °C/W

Rthj-lead

Rthj-amb

Thermal resistance junction-lead

Thermal resistance junction-ambient

70(1)

15

65(1)

54(1)

°C/W

°C/W

1. When mounted on a standard single-sided FR4 board with 50 mm2 of Cu (at least 35 μm thick) connected

to all DRAIN pins

2.3

Electrical characteristics

Table 4.

Symbol

Electrical characteristics

Parameter

Test conditions

Off (-40 °C<Tj<150 °C, unless otherwise specified)

VCLAMP

Drain-source clamp

voltage

VIN=0 V; ID=0.5 A

VCLTH

Drain-source clamp

threshold voltage

VIN=0 V; ID=2 mA

VINTH

Input threshold

voltage

VDS=VIN; ID=1 mA

IISS

Supply current from

input pin

VDS=0 V; VIN=5 V

VINCL

IDSS

Input-source clamp

voltage

Zero input voltage

drain current

(VIN=0 V)

IIN=1 mA

IIN=-1 mA

VDS=13 V; VIN=0 V; Tj=25 °C

VDS=25 V; VIN=0 V

On (-40 °C<Tj<150 °C, unless otherwise specified)

RDS(on)

Static drain-source on VIN=5 V; ID=0.5 A; Tj=25 °C

resistance

VIN=5 V; ID=0.5 A

Dynamic (Tj=25 °C, unless otherwise specified)

gfs (1)

Forward

transconductance

VDD=13 V; ID=0.5 A

COSS Output capacitance VDS=13 V; f=1 MHz; VIN=0 V

Switching (Tj=25 °C, unless otherwise specified)

Min Typ Max Unit

40 45 55 V

36

V

0.5

2.5 V

100 150 µA

6 6.8 8

V

-1.0

-0.3

30

µA

75

250

mΩ

500

2

S

90

pF

Doc ID 7381 Rev 2

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