VNP5N07 Ver la hoja de datos (PDF) - STMicroelectronics
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VNP5N07 Datasheet PDF : 11 Pages
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VNP5N07
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (∗∗)
Symb ol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
(di/ dt) on
Qi
P a ram et er
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Test Conditions
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 2.5 A
Rgen = 10 Ω
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 2.5 A
Rgen = 1000 Ω
VDD = 15 V
Vin = 10 V
VDD = 12 V
ID = 2.5 A
Rgen = 10 Ω
ID = 2.5 A Vin = 10 V
Min.
Typ .
50
60
150
40
150
400
3900
1100
35
18
M a x.
100
100
300
80
250
600
5000
1600
Unit
ns
ns
ns
ns
ns
ns
ns
ns
A/µs
nC
SOURCE DRAIN DIODE
Symb ol
P a ram et er
VSD (∗) Forward O n Volt age
tr r (∗∗)
Qrr (∗∗)
IRRM (∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Cu r re nt
Test Conditions
ISD = 2.5 A VIN =0
ISD = 2.5 A
VDD = 30 V
di/dt = 100 A/µs
Tj = 25 oC
(see test circuit, figure 5)
Min.
Typ .
150
0.3
5.7
M a x.
1.6
Unit
V
ns
µC
A
PROTECTION
Symb ol
P a ram et er
Test Conditions
Ilim
Drain Current Limit
tdlim (∗∗) St ep Response
Current Limit
Vin = 10 V
Vin = 5 V
Vin = 10 V
Vin = 5 V
VDS = 13 V
VDS = 13 V
Tjsh (∗∗) Overtemperature
Shutdown
Tjrs (∗∗) Overtemperature Reset
Igf (∗∗) Fault Sink Current
Vin = 10 V VDS = 13 V
Vin = 5 V VDS = 13 V
Eas (∗∗) Single Pulse
starting Tj = 25 oC VDD = 20 V
Avalanche Energy
Vin = 10 V Rgen = 1 KΩ L = 30 mH
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parametes guaranteed by design/characterization
Min.
3.5
3.5
150
135
0.2
Typ .
5
5
15
40
50
20
M a x.
7
7
20
60
Unit
A
A
µs
oC
oC
mA
J
3/11
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