VNB20N07 Ver la hoja de datos (PDF) - STMicroelectronics
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VNB20N07 Datasheet PDF : 13 Pages
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VNP20N07FI-VNB20N07-VNV20N07
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (∗∗)
Symb ol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
(di/ dt) on
Qi
P a ram et er
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Test Conditions
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 10 A
Rgen = 10 Ω
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 10 A
Rgen = 1000 Ω
VDD = 15 V
Vin = 10 V
VDD = 12 V
ID = 10 A
Rgen = 10 Ω
ID = 10 A Vin = 10 V
Min.
Typ .
90
240
430
150
800
1.5
6
3.5
60
M a x.
180
400
800
300
1200
2.2
10
5.5
Unit
ns
ns
ns
ns
ns
µs
µs
µs
A/µs
60
nC
SOURCE DRAIN DIODE
Symb ol
VSD (∗)
t r r(∗∗ )
Qr r(∗∗)
IRRM (∗∗)
P a ram et er
Forward O n Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Cu r re nt
Test Conditions
ISD = 10 A Vin = 0
ISD = 10 A di/dt = 100 A/µs
VDD = 30 V Tj = 25 oC
(see test circuit, figure 5)
Min.
Typ .
165
0.55
6.5
M a x.
1.6
Unit
V
ns
µC
A
PROTECTION
Symb ol
P a ram et er
Test Conditions
Ilim
Drain Current Limit
tdlim(∗∗) St ep Response
Current Limit
Vin = 10 V
Vin = 5 V
Vin = 10 V
Vin = 5 V
VDS = 13 V
VDS = 13 V
Tjsh(∗∗) Overtemperature
Shutdown
Tjrs(∗∗) Overtemperature Reset
Igf(∗∗) Fault Sink Current
Vin = 10 V
Vin = 5 V
Eas(∗∗) Single Pulse
starting Tj = 25 oC VDD = 20 V
Avalanche Energy
Vin = 10 V Rgen = 1 KΩ L = 10 mH
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
Min.
14
14
150
135
0.95
Typ .
20
20
29
70
50
20
M a x.
28
28
60
140
Unit
A
A
µs
µs
oC
oC
mA
mA
J
3/13
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