VNB49N04 Ver la hoja de datos (PDF) - STMicroelectronics
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VNB49N04 Datasheet PDF : 14 Pages
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VNP49N04FI / VNB49N04 / VNV49N04
THERMAL DATA
Symbol
Rthj-case
Rthj-amb
Parameter
Thermal Resistance Junction-case}}}
Thermal Resistance Junction-ambient
MAX
MAX
PowerSO-10
1
50
Value
D2PAK
1
62.5
ISOW ATT2 20
3.12
62.5
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (-40°C < Tj < 125°C, unless otherwise specified)
OFF
Symbol
VCLAMP
VCLTH
VINCL
IDSS
IISS
Parameter
Test Condit ions
Drain-source Clamp
Voltage
ID=200 mA; VIN=0
Drain-source Clamp
Threshold Voltage
ID=2mA; VIN=0
Input-Source Reverse
Clamp Voltage
IIN= -1mA
Zero Input Voltage Drain
Current (VIN=0V)
Supply Current from Input
Pin
VDS=13V; VIN=0V
VDS=25V; VIN=0V
VDS=0V; VIN=10V
Min Typ Max Unit
34
42
50
V
33
V
-1.2
-0.1
V
70
µA
220
µA
250 550
µA
ON (*)
Symbol
VIN(th)
RDS(on)
Parameter
Input Threshold Voltage
Static Drain-source On
Resistance
Test Condit ions
VDS=VIN; ID + IIN=1mA
VIN=10V; ID=25A
VIN=5V; ID=25A
Min Typ Max Unit
0.8
3
V
0.04
Ω
0.05
Ω
DYNAMIC
Symbol
gfs (*)
COSS
Parameter
Forward
Transconductance
Output Capacitance
Test Condit ions
Min Typ Max Unit
VDS=13V; ID=25A; Tc=25°C
25
30
S
VDS=13V; f=1MHz; VIN=0V; Tc=25°C
1100 1500 pF
SWITCHING (**)
Symbol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
(di/dt)on
Qi
Parameter
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Test Conditions
VDS=15V; ID=25A
Vgen=10V; Rgen=10 Ω
(see figure 3)
VDS=15V; ID=25A
Vgen=10V; Rgen=1000Ω
(see figure 3)
VDS=15V; ID=25A
VIN=10V; Rgen=10 Ω
VDS=15V; ID=25A; VIN=10V
Min Typ Max Unit
200 600
ns
1300 3600 ns
800 2400 ns
300 900
ns
1.3
3.8
µs
3.8 10.4
µs
12
24
µs
6.1
17
µs
25
A/µs
100
nC
3/14
1
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