VNS7NV04 Ver la hoja de datos (PDF) - STMicroelectronics
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VNS7NV04 Datasheet PDF : 37 Pages
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VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
Electrical specifications
Table 4. Electrical characteristics (continued)
Symbol
Parameter
Test conditions
Switching (Tj=25 °C, unless otherwise specified)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
(dI/dt)on Turn-on current slope
Qi
Total input charge
VDD=15 V; ID=3.5 A
Vgen=5 V; Rgen=RIN MIN=150 Ω
(see figure Figure 4.)
VDD=15 V; ID=3.5 A
Vgen=5 V; Rgen=2.2 KΩ
(see figure Figure 4.)
VDD=15 V; ID=3.5 A
Vgen=5 V; Rgen=RIN MIN=150 Ω
VDD=12 V; ID=3.5 A; VIN=5 V
Igen=2.13 mA (see figure Figure 7.)
Source drain diode (Tj=25 °C, unless otherwise specified)
VSD(1) Forward on voltage
ISD=3.5 A; VIN=0 V
trr
Qrr
IRRM
Reverse recovery time ISD=3.5 A; dI/dt=20 A/µs
Reverse recovery charge VDD=30 V; L=200 µH
Reverse recovery current (see test circuit, figure Figure 5.)
Protections (-40 °C < Tj < 150 °C, unless otherwise specified)
Ilim
Drain current limit
VIN=5 V; VDS=13 V
tdlim
Step response current
limit
VIN=5 V; VDS=13 V
Tjsh
Over temperature
shutdown
Tjrs Over temperature reset
Igf
Fault sink current
VIN=5 V; VDS=13 V; Tj=Tjsh
Eas
Single pulse avalanche
energy
starting Tj=25 °C; VDD=24 V
VIN=5 V Rgen=RIN MIN=150 Ω; L=24 mH
(see figures Figure 6. & Figure 8.)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min Typ Max Unit
100 300 ns
470 1500 ns
500 1500 ns
350 1000 ns
0.75 2.3 µs
4.6 14.0 µs
5.4 16.0 µs
3.6 11.0 µs
6.5
A/µs
18
nC
0.8
V
220
ns
0.28
µC
2.5
A
6
9
12
A
4.0
µs
150 175 200 °C
135
°C
15
mA
200
mJ
Doc ID 7383 Rev 4
9/37
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