SIHF15N60E(2013) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
fabricante
SIHF15N60E Datasheet PDF : 8 Pages
| |||
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiHF15N60E
Vishay Siliconix
50 TOP 15 V
14 V
13 V
12 V
40
11 V
10 V
9V
8V
7V
30
6V
BOTTOM 5 V
20
TJ = 25 °C
10
0
0
5
10
15
20
25
30
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
3
ID = 8 A
2.5
2
1.5
1
VGS = 10 V
0.5
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
30
TOP 15 V
14 V
13 V
25
12 V
11 V
10 V
9V
20
8V
7V
BOTTOM 6 V
15
TJ = 150 °C
10
5
5V
0
0
5
10
15
20
25
30
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
10 000
1000
100
Ciss
Coss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
10
Crss
1
0
100 200 300 400 500 600
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
50
TJ = 25 °C
40
30
20
TJ = 150 °C
10
24
VDS = 480 V
20
VDS = 300 V
VDS = 120 V
16
12
8
4
0
0
5
10
15
20
25
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
0
0
20
40
60
80
Qg, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S13-0026-Rev. D, 21-Jan-13
3
Document Number: 91480
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Share Link: 