SIHF15N60E(2013) Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

fabricante

SIHF15N60E
(Rev.:2013)

E Series Power MOSFET

Vishay Semiconductors 

www.vishay.com

VDS

VGS

RG

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 12 - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 13 - Switching Time Waveforms

VDS

Vary tp to obtain

required IAS

RG

10 V

tp

L

D.U.T

IAS

0.01 Ω

+

- VDD

Fig. 14 - Unclamped Inductive Test Circuit

VDS

VDS

tp

VDD

IAS

Fig. 15 - Unclamped Inductive Waveforms

SiHF15N60E

Vishay Siliconix

10 V

QGS

VG

QG

QGD

Charge

Fig. 16 - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 17 - Gate Charge Test Circuit

S13-0026-Rev. D, 21-Jan-13

5

Document Number: 91480

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: