NXP Semiconductors
Low-leakage double diode
Product data sheet
BAV170
FEATURES
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
DESCRIPTION
Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are in
common cathode configuration.
PINNING
PIN
1
2
3
DESCRIPTION
anode
anode
common cathode
APPLICATION
• Low-leakage current applications in
surface mounted circuits.
MARKING
TYPE NUMBER
BAV170
MARKING
CODE(1)
JX*
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
handbook, 4 columns
2
1
3
Top view
2
1
3
MAM108
Fig.1 Simplified outline (SOT23) and symbol.
2003 Mar 25
2