BAW56TT1G(2010) Ver la hoja de datos (PDF) - ON Semiconductor
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BAW56TT1G Datasheet PDF : 4 Pages
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BAW56TT1G
Dual Switching Diode
Features
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
MAXIMUM RATINGS (TA = 25C)
Rating
Symbol
Max
Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
VR
70
IF
200
IFM(surge)
500
Vdc
mAdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR--4 Board (Note 1), TA = 25C
Derated above 25C
PD
225
mW
1.8
mW/C
Thermal Resistance, Junction--to--Ambient
(Note 1)
RJA
555
C/W
Total Device Dissipation,
FR--4 Board (Note 2), TA = 25C
Derated above 25C
PD
360
mW
2.9
mW/C
Thermal Resistance, Junction--to--Ambient
(Note 2)
RJA
345
C/W
Junction and Storage
Temperature Range
TJ, Tstg --55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR--4 @ Minimum Pad
2. FR--4 @ 1.0 1.0 Inch Pad
3
ANODE
CATHODE
1
2
CATHODE
1
CASE 463
SC--75/SOT--416
STYLE 4
MARKING DIAGRAM
A1 M G
G
1
A1 = Specific Device Code
M = Date Code*
G = Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BAW56TT1G SC--75/SOT--416 3000/Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010
1
October, 2010 -- Rev. 3
Publication Order Number:
BAW56TT1/D
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