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BF996S,215 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Lista de partido
BF996S,215
Vishay
Vishay Semiconductors Vishay
BF996S,215 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NXP Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF996S
FEATURES
Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source.
APPLICATIONS
RF applications such as:
– UHF television tuners
– Professional communication equipment.
PINNING
PIN
1
2
3
4
SYMBOL
DESCRIPTION
s, b source
d
drain
g2
gate 2
g1
gate 1
DESCRIPTION
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
handbook, halfpage
4
3
d
g2
g1
1
2
s,b
Top view
MAM039
Marking code: MHp.
Fig.1 Simplified outline (SOT143) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
VDS
ID
Ptot
Tj
Yfs
Cig-1s
Crs
F
drain-source voltage
drain current
total power dissipation
up to Tamb = 60 C
junction temperature
transfer admittance
f = 1 kHz; ID = 10 mA; VDS = 15 V; VG2S = 4 V 18
input capacitance at gate 1 f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2S = 4 V 2.3
feedback capacitance
f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2S = 4 V 25
noise figure
f = 200 MHz GS = 2 mS; BS = BSopt;
1
ID = 10 mA; VDS = 15 V; VGS2 = 4 V
MAX.
20
30
200
150
2.6
UNIT
V
mA
mW
C
mS
pF
fF
dB
April 1991
2
 

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