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BF996S,215 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Lista de partido
BF996S,215
Vishay
Vishay Semiconductors Vishay
BF996S,215 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NXP Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF996S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDS
ID
ID(AV)
IG1-S
IG1-S
Ptot
Tstg
Tj
drain-source voltage
drain current (DC)
average drain current
gate 1 source
gate 2 source
total power dissipation
storage temperature range
junction temperature
CONDITIONS
up to Tamb = 60 C; note 1
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient in free air; note 1
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8 10 0.7 mm.
MIN.
65
MAX.
20
30
30
10
10
200
+150
150
UNIT
V
mA
mA
mA
mA
mW
C
C
VALUE
460
UNIT
K/W
handboo2k,0h0alfpage
Ptot
(mW)
100
MGE792
0
0
100
Tamb (°C)
200
Fig.2 Power derating curve.
April 1991
3

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