STS4DNF30L(2002) Ver la hoja de datos (PDF) - STMicroelectronics
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STS4DNF30L Datasheet PDF : 6 Pages
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STS4DNF30L
DUAL N-CHANNEL 30V - 0.039Ω - 4A SO-8
STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STS4DNF30L
30 V < 0.050 Ω 4 A
s TYPICAL RDS(on) = 0.039 Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable
manufacturing reproducibility.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s POWER MANAGMENT IN CELLULAR PHONES
s DC MOTOR DRIVE
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C Dual Operation
(q)Pulse width limited by safe operating area.
August 2002
Value
30
30
± 16
4
2.5
16
2
Unit
V
V
V
A
A
A
W
1/6
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