STS4DPF30L Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Lista de partido

STS4DPF30L

DUAL P-CHANNEL 30V - 0.07 Ω - 4A SO-8 STripFET™ POWER MOSFET

STMicroelectronics 

STS4DPF30L

DUAL P-CHANNEL 30V - 0.07 Ω - 4A SO-8

STripFET™ POWER MOSFET

PRELIMINARY DATA

TYPE

VDSS

RDS(on)

ID

STS4DPF30L

30 V

<0.08 Ω

4A

s TYPICAL RDS(on) = 0.07 Ω

s STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

s LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

s POWER MANAGEMENT IN CELLULAR

PHONES

s DC-DC CONVERTER

SO-8

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS Drain-source Voltage (VGS = 0)

30

V

VDGR Drain-gate Voltage (RGS = 20 kΩ)

30

V

VGS Gate- source Voltage

± 16

V

ID

Drain Current (continuous) at TC = 25°C Single Operation

Drain Current (continuous) at TC = 100°C Single Operation

4

2.5

A

A

IDM(•) Drain Current (pulsed)

16

A

Ptot

Total Dissipation at TC = 25°C Dual Operation

Total Dissipation at TC = 25°C Single Operation

(•) Pulse width limited by safe operating area.

2.0

W

1.6

W

Note: For the P-CHANNEL MOSFET actual polarity of voltages and

current has to be reversed

April 2002

1/6

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

Share Link: