STS3DPF30L Ver la hoja de datos (PDF) - STMicroelectronics
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STS3DPF30L Datasheet PDF : 5 Pages
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STS3DPF30L
DUAL P - CHANNEL 30V - 0.145Ω - 3A SO-8
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STS3DPF30L
30 V < 0.16 Ω
3A
s TYPICAL RDS(on) = 0.145 Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
PRELIMINARY DATA
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique "Single Feature Size™
" strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarka-
ble manufacturing reproducibility.
SO-8
APPLICATIONS
s BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s POWER MANAGMENT IN CELLULAR
PHONES
s DC-DC CONVERTER
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID
Drain Current (continuous) at Tc = 25 oC
Single Operation
Drain Current (continuous) at Tc = 100 oC
Single Operation
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC Dual Operation
Total Dissipation at Tc = 25 oC Single Operation
(•) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Value
30
30
± 20
3
1.9
12
2
1.6
May 2000
Unit
V
V
V
A
A
A
W
W
1/5
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