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110RKI Ver la hoja de datos (PDF) - New Jersey Semiconductor

Número de pieza
componentes Descripción
Lista de partido
110RKI
NJSEMI
New Jersey Semiconductor NJSEMI
110RKI Datasheet PDF : 3 Pages
1 2 3
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
., LJnc.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
Blocking
Parameter
dv/dt Maximum critical rate of rise of
off-state voltage
'RRM Max- Pealt reuerse and off-state
IDRM leakage current
110/111RK1
500
Units Conditions
V/us Tj = Tj max. linear to B0% rated VonM '
20
mA L =• TJ ma*' rated VDHM'VRR* aPP|ie(1
Triggering
Parameter
PGM Maximum peak gate power
PG(AV) Maximum average gate power
'QM Max. peak positive gate current
+VOM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT DC gate current required
lo trigger
VGT DC gate voltage required
to trigger
IGD DC gate current not to trigger
110/111RKI
12
3.0
3.0
20
10
TYP.
MAX.
180
80
120
40
2.5
1.6
2
1
6.0
VGD DC gate voltage not to trigger
0.25
Units Conditions
Tj = Tj max, I < 5ms
w
Tj - Tj max, f = SOHz, d% =50
A Tj = Tj max. t < 6ms
V Tj - TJ, max, t p< 5ms
Tj = - 40'C
mA T = 25'C
Tj = 14Q'C
T =-40°C
''
V T j = 25'C
Tj = 140'C
mA
V Tj = Tj max
Max. required gate trigger/ cur-
renl/ voltage are the lowest value
which wiH trigger all units 12V
anode-to-cathode applied
Max. gate current/ voltage not to
trigger is the max. value which
win not trigger any unit with rated
VDRM anode-to-cathode applied
Thermal and Mechanical Specification
Parameter
110/1 11RKI
Units Conditions
Tj
Max. operating temperature range
-4010140
•c
T . Max. storage temperature range
-4010160
RmJC Max. thermal resistance,
junction to case
R([lCS Max. thermal resistance,
case to heatsink
T
Mounting torque, ±10%
0.27
0.1
15.5
(137)
14
(120)
DC operation
K/W
Mounting surface, smooth, flat and greased
Non lubricated threads
Mm
(Ibf-in) Lubricated threads
wt Approximate weight
Case style
130
g
TO-209AC(TO-94)
See Outline Table
Quality Semi-Conductors

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