1N4001 Ver la hoja de datos (PDF) - Mospec Semiconductor

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1N4001

GENERAL PURPOSE SILICON RECTIFIER

Mospec Semiconductor 

MOSPEC

GENERAL PURPOSE SILICON RECTIFIER

VOLTAGE RANGE 50 TO 1000 Volts Current 1 Ampere

FEATURES

＊Low cost construction

＊Low forward voltage drop

＊Low reverse leakage

＊High forward surge current capability

＊High temperature soldering guaranteed

260℃/10 seconds, 0.375”(9.5 mm) lead length

at 5 lbs(2.3kg) tension

MECHANICAL DATA

＊Case：Transfer Molded Plastic

＊Epoxy: UL94V-O rate flame retardant

＊Terminals：Solderable Per MIL-STD-202 Method 208

＊Polarity：Color band denotes cathode end

＊Mounting position: Any

＊Weight： 0.012 ounce. 0.33 gram (approx)

1N4001 THRU 1N4007

DO-41

MILLIMETERS

DIM

MIN MAX

A

2.00 2.70

B 25.40

---

C

4.20 5.20

D

0.70 0.90

MAXIMUM RATINGS AND ELECTRICAL CHARATERISTICS

* Rating at 25℃ ambient temperature unless otherwise specified

* Single phase,half wave. 60Hz, resistive or inductive load.

* For capacitive load derate current by 20 %

Characteristic

Symbol 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

50 100 200 400 600 800 1000

RMS Reverse Voltage

VR(RMS)

35

Average Rectifier Forward Current

Per Leg

TC=125℃

Non-Repetitive Peak Surge Current (Surge

applied at rate load conditions halfware,

single phase, 60Hz)

Maximum Instantaneous Forward Voltage

( IF =1.0 Amp TC = 25℃)

Maximum Instantaneous Reverse Current

( Rated DC Voltage, TC = 25℃)

( Rated DC Voltage, TC = 100℃)

Typical Junction Capacitance

(Reverse Voltage of 4 volts & f=1 MHz)

IF(AV)

IFSM

VF

IR

Cj

Typical Thermal Resistance

Operating and Storage Junction

Temperature Range

Rθ jA

TJ , Tstg

70 140 280 420 560 700

1.0

30

1.1

5.0

50

15

50

-65 to +175

Unit

V

V

A

A

V

uA

pF

℃/W

℃

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