2N2322 Ver la hoja de datos (PDF) - Comset Semiconductors
Número de pieza
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Lista de partido
2N2322 Datasheet PDF : 3 Pages
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2n2322 to 2n2326
ELECTRICAL CHARACTERISTICS (*)
TJ=25°C unless otherwise noted, RGK=1000Ω
Symbol
Ratings
2N2322 2N2323 2N2324 2N2325 2N2326 Unit
VDRM
IRRM
IDRM
VTM
IGT
VGT
IH
Peak Forward Blocking
Voltage (1)
Min :
25
Peak Reverse Blocking
Current
(Rated VDRM, TJ =125°C)
Peak Forward Blocking
Current
(Rated VDRM, TJ =125°C)
Forward « on » Voltage
ITM=1.0 A Peak
ITM =3.14 A Peak
TC =85°C
Gate Trigger Current (2)
Anode Voltage=6.0 Vdc
RL=100Ω
Anode Voltage=6.0 Vdc
RL=100Ω, TC=-65°C
Gate Trigger Voltage
Anode Voltage=6.0 V
RL=100Ω
Anode Voltage=6.0 V
RL=100Ω, TC=-65°C
VDRM = Rated
RL=100Ω, TJ=125°C
Holding Current
Anode Voltage=6.0 V
Anode Voltage=6.0 V
TC=-65°C
Anode Voltage=6.0 V
TC=125°C
50
100
150
Max : 100
200
V
µA
Max : 100
µA
Max : 1.5
V
Max : 2.0
Max : 200
µA
Max : 350
Max : 0.8
Max : 1.0
V
Min : 0.1
Max : 2.0
Max : 3.0
mA
Min : 0.15
(*) JEDEC Registered Values
(1) VRSM and VDRM can be applied for all types on a continuous dc basis without incurring
damage.
(2) RGK current is not included in measurement.
12/11/2012
COMSET SEMICONDUCTORS
2|3
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