2N3773(2013) Ver la hoja de datos (PDF) - ON Semiconductor
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2N3773 Datasheet PDF : 7 Pages
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1000
100
2N3773
TYPICAL CHARACTERISTICS
f = 1 MHz
TA = 25°C
10,000
1000
f = 1 MHz
TA = 25°C
10
100
0
50
100
150
200
0
1
2
3
4
5
6
7
8
VCB, COLLECTOR−BASE VOLTAGE (V)
VEB, EMITTER−BASE VOLTAGE (V)
Figure 7. Output Capacitance
Figure 8. Input Capacitance
30
20
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
0.05
0.03
3.0
10 ms
40 ms
100 ms
dc
200 ms
1.0 ms
100 ms
BONDING WIRE LIMIT
THERMAL LIMIT
@ TC = 25°C, SINGLE PULSE
SECOND BREAKDOWN LIMIT
500 ms
5.0 7.0 10 20 30 50 70 100 200 300
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 200_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
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