2SB561 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Lista de partido

2SB561

Silicon PNP Epitaxial

Renesas Electronics 

2SB561

Electrical Characteristics

Item

Symbol Min Typ Max

Collector to base breakdown voltage

V(BR)CBO

–25

—

—

Collector to emitter breakdown voltage V(BR)CEO –20

—

—

Emitter to base breakdown voltage

V(BR)EBO

–5

—

—

Collector cutoff current

DC current transfer ratio

ICBO

—

— –1.0

hFE*1

85

—

240

Collector to emitter saturation voltage

Base to emitter voltage

Gain bandwidth product

Collector output capacitance

VCE(sat)

VBE

fT

Cob

— –0.2 –0.5

— –0.75 –1.0

—

350

—

—

20

—

Note: 1. The 2SB561 is grouped by hFE as follows.

B

C

85 to 170 120 to 240

Unit

V

V

V

µA

V

V

MHz

pF

(Ta = 25°C)

Test conditions

IC = –10 µA, IE = 0

IC = –1 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –20 V, IE = 0

VCE = –1 V,

IC = –0.15 A (Pulse test)

IC = –0.5 A, IB = –0.05 A

VCE = –1 V, IC = –0.15 A

VCE = –1 V, IC = –0.15 A

VCB = –10 V, IE = 0

f = 1 MHz

Rev.2.00 Aug 10, 2005 page 2 of 5

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