2SC2001 Ver la hoja de datos (PDF) - Transys Electronics Limited

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2SC2001

NPN TO-92 Plastic-Encapsulated Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

TO-92 Plastic-Encapsulated Transistors

2SC2001 TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

Collector current

ICM:

Collector-base voltage

V(BR)CBO:

0.6 W (Tamb=25℃)

0.7 A

30 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

CLASSIFICATION OF hFE

Rank

Range

M

90-180

Symbol Test conditions

V(BR)CBO

Ic=100µA , IE=0

V(BR)CEO

IC=10mA , IB=0

V(BR)EBO

IE=100µA, IC=0

ICBO

VCB=30 V , IE=0

ICEO

VCE=20 V , IB=0

IEBO

VEB=5 V , IC=0

hFE

VCE=1V, IC=100mA

VCE(sat)

IC=700mA, IB= 70mA

VBE(sat)

fT

IC= 700mA, IB=70mA

VCE=6V, IC= 10mA

f = 30MHz

MIN MAX UNIT

30

V

25

V

5

V

0.1

µA

0.1

µA

0.1

µA

90

400

0.6

V

1.2

V

50

MHz

L

135-270

K

200-400

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