D1691(2010) Ver la hoja de datos (PDF) - Unisonic Technologies
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D1691 Datasheet PDF : 4 Pages
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2SD1691
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
7
V
Collector Current
DC
Pulse (PW≦10ms,Duty Cycle≦50%)
Ic
Icp
5
8
A
Base Current
IB
1
A
TO-126/ TO-126C
20
Collector Power Dissipation (Tc=25°C) TO-220F1
Pc
23
W
TO-220
54
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn On Time
Switching Time
Storage Time
Fall Time
SYMBOL
TEST CONDITIONS
ICBO
VCB=50V,IE=0
IEBO
VEB=7V,Ic=0
hFE1
VCE=1V,Ic=0.1A
hFE2
VCE=1V,Ic=2A
hFE3
VCE=2V,Ic=5A
VCE(SAT) (Note) Ic=2A,IB=0.2A
VBE(SAT) (Note) Ic=2A,IB=0.2A
TON
TSTG
TF
20μsec
IB1
INPUT
IB1
Ω IB2
IB2
IB1=-IB2=0.2A
DUTY CYCLE≦1%
OUTPUT
5Ω
Vcc=10V
MIN TYP MAX UNIT
10 μA
10 μA
60
160
400
50
0.1 0.3 V
0.9 1.2 V
0.2 1
1.1 2.5 μs
0.2 1
Note: Pulse test: PW≦50μS, Duty Cycle≦2% Pulse
CLASSIFICATION OF hFE2
RANK
RANGE
O
160-320
Y
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R204-015,C
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