A42L0616(2002) Ver la hoja de datos (PDF) - AMIC Technology

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A42L0616
(Rev.:2002)

1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE

AMIC Technology 

A42L0616 Series

AC Characteristics (continued) (VCC = 3.3V ± 0.3V, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C)

Test Conditions:

Input timing reference level: VIH/VIL=2.0V/0.8V

Output reference level: VOH/VOL=2.0V/0.8V

Output Load: 2TTL gate + CL (50pF)

Assumed tT=2ns

Std

# Symbol

Parameter

-45

-50

Unit

Min. Max. Min. Max.

39

tAWD Column Address to WE Delay Time

(Read-Modify-Write)

34

-

37

-

ns

Notes

11

40

tOEH

OE Hold Time from WE

7

-

8

-

ns

41

tOEP

OE High Pulse Width

5

-

5

-

ns

42

tPC

Read or Write Cycle Time (EDO Page)

18

-

20

-

ns

14

43

tCPA Access Time from CAS Precharge (EDO Page)

-

21

-

23

ns

13

44

tCP

CAS Precharge Time

7

-

8

-

ns

45

tPCM EDO Page Mode RMW Cycle Time

46

-

50

-

ns

46

tCRW EDO Page Mode CAS Pulse Width (RMW)

35

-

38

-

ns

47

tRASP RAS Pulse Width (EDO Page)

45 200K 50 200K ns

48

tCSR

CAS Setup Time ( CAS -before- RAS )

5

-

5

-

ns

3

49

tCHR

CAS Hold Time ( CAS -before- RAS )

10

-

10

-

ns

3

50

tRPC

RAS to CAS Precharge Time

10

-

10

-

ns

3

51

tOEZ

Output Buffer Turn-off Delay from OE

-

2

-

3

ns

8

52

tRASS

RAS pulse width ( C -B-R self refresh)

100

-

100

-

µs

53

tRPS

RAS precharge time ( C -B-R self refresh)

76

-

84

-

ns

54

tCHS

CAS hold time ( C -B-R self refresh)

-50

-

-50

-

ns

PRELIMINARY (June, 2002, Version 0.2)

8

AMIC Technology, Inc.

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